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            RB886CS Diodes 2/2 』Electrical characteristic curves (Ta=25°C) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.001 0.01 0.1 1 10 100 1000TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) ELECTROSTATIC D I SCHARGE TEST ESD(KV) ESD DISPERSION MAP 0.01 0.1 1 10 0 300 600 900 1200 1500 1 10 100 1000 012345 0.1 1 012345 f=1MHz 250 260 270 280 290 300 AVE:275.2mV Ta=25℃ VF=1mA n=30pcs 0 50 100 150 200 250 300 Ta=25℃ VR=5V n=30pcs AVE:21.63uA Ta=25℃ f=1MHz VR=1V n=10pcs 10 100 1000 Rth(j-a) Rth(j-c) 1m IM=1mA IF=10mA 300u time Mounted on epoxy board 0 1 2 3 4 5 AVE:0.48kV AVE:1.47kV C=100pF R=1.5kΩ C=200pF R=0Ω Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Ta=125℃ Ta=25℃ Ta=75℃ Ct DISPERSION MAP AVE:0.520pF |